Heteroepitaxial Diamond Growth
Abstract
Work during this phase of the diamond program began to focus on issues which were limiting diamond technology: (1) The role of oxygen in diamond CVD, (2) Why the limited success of heteroepitaxy on Ni? (3) Tools for quantitative microstructural characterization (4) Techniques for separation and lift-off of thin single crystal sheets of diamond (5) Epitaxial consolidation of individual diamond crystals, (6) High quality homoepitaxy. Highlights of this period include expounding the role of O in diamond CVD through surface chemistry, expounding the role of subsurface species to CH3 adsorption on Ni(111) surfaces, developing ion implantation annealing procedures for separation of diamond platelets, plan-view TEM characterization of type la and IIb diamonds, epitaxial consolidation of two adjacent diamonds, and critical evaluation of H2/CH4, H2/CH4/CO, H2/CO chemistries for homoepitaxial growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1992
- Accession Number
- ADA257356
Entities
People
- G. C. Hudson
- John B. Posthill
- R. E. Thomas
- Robert J. Markunas
- Ronald A. Rudder
Organizations
- RTI International