Effects of Processing on MOS Radiation Hardening
Abstract
This study substantiated the beneficial effects of using fluorine as an additive during the oxidation of silicon for application to Insulated Gate- Field Effect transistor technology. The modern trend towards smaller devices makes it imperative to reduce the time and/or temperature required for the oxidation process. The dramatic increase in oxidation rates resulting from very small fluorine additions suggests the desirability of using fluorine. The results of this study have clearly shown a significant reduction in the strain at the Si-SiO2 interface, and in addition, a reduction in the oxidation enhanced stacking faults in the silicon. Electrical characterization confirmed the conclusion that the rise of fluorine is beneficial. The results are discussed. In the course of this work, a relatively new technique was developed to use Q-V measurements to evaluate the interface and results of these measurements are included. In summary, we are excited about the significant technological improvements that result from the use of fluorine during the oxidation process. Oxidation, Fluorine, Interface Measurements, Point Defects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1992
- Accession Number
- ADA257361
Entities
People
- Donald R Young .
- Ralph J. Jaccodine
Organizations
- Lehigh University