Laser-Induced Dissociation of HN sub 3 (DN sub 3) on GaAs (100) K

Abstract

HN3 (DN3) molecularly adsorbed on GaAs (100) at 100 K and formed dimers at higher dosages (>20 L). Exposing the sample to 308 nm excimer laser radiation caused the dissociation of HN3 into HN and N2 species. The N2, residual HN3 and some HN species desorbed from the surface, as the irradiated sample was further annealed at 200 to 550 K. Both HREELS and XPS results indicated that NH species bonded to the As rather than the Ga atom on GaAs (100) under the present experimental conditions.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA257426

Entities

People

  • Lang Ma
  • Lin Ming-chang
  • Yuheng Bu

Organizations

  • Emory University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Chemistry
  • Desorption
  • Dissociation
  • Energy
  • Excimer Lasers
  • Intensity
  • Lasers
  • Losses
  • Military Research
  • Molecules
  • Radiation
  • Spectra
  • Substrates
  • Surfaces
  • United States Government
  • Vibration

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition