Magnetostatic Wave Technology
Abstract
The integration of GaAs with ferrimagnetic garnets was investigated and demonstrated. A hybrid technique was first used to integrate two GaAs circuits with yttrium-iron garnet (YIG) delay lines, demonstrating the feasibility and benefits of combining the two materials in special microwave operations. The epitaxial growth of single-crystal GaAs on gadolinium-gallium garnet (GGG) was then accomplished, demonstrating a first step in the monolithic integration of the two materials. The hybrid circuit, consisting of a GaAs microwave circuit integrated with a tapped YIG delay line, formed an oscillator with an extremely short external delay loop, and taps provided multiple outputs with long delay times. The oscillator was tunable from 2.76 to 2.95 GHz with a 3-dB bandwidth of lOkHz. The first growth of GaAs on GGG was successfully performed by using an InAs buffer layer and an InAs/GaAs multilayer structure between the GGG and the GaAs. The unintentionally doped InAs layers were n-type with room-temperature donor concentrations in the range of 7xlO to the 16 power to 2xlO to the 18 power cm-3 , and corresponding mobilities were 3.5xlO to the third power to lxl0 to the 3 power cm2/V s. Hall measurements indicated that the GaAs was conducting. These were the first electrical measurements ever reported for any III-V compound semiconductor deposited on a garnet.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1992
- Accession Number
- ADA257723
Entities
People
- A. R. Calawa
- R. A. Murphy
Organizations
- Massachusetts Institute of Technology