High Temperature Superconductivity
Abstract
The overall goals of this program are to develop the technology of MBE(Molecular Beam Epitaxy) growth of HTSC(High Temperature Superconductivity) material, to optimize the performance of HTSC films with high transition temperatures and critical current densities, and to explore the development of electronic devices based on such material. Engineered samples used to study trilayer transport are being grown. The films have large defect free regions and transition temperatures in excess of 80 K. This period we demonstrated that improved control over material growth parameters leads to improved uniformity of Josephson junction critical current density.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 11, 1992
- Accession Number
- ADA257789
Entities
People
- James N. Eckstein
Organizations
- Stanford University Medical Center