Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled AlGaAs/GaAs Multiquantum Well IR Detectors for Focal Plane Array Staring IR Sensor Systems
Abstract
Project Objectives: to develop ultra-low dark current and high detectivity planar metal grating coupled bound-to-miniband(BTM) III-V quantum well infrared photodetectors, (QWIPs) for 8 to 12 microns focal plane array (FPA) staring IR sensor system; to develop novel type-I and type-II III-V QWIPs with multicolor, broad and narrow band spectral response in the 8 to 14 microns wavelength range. The material systems to be studied include GaAs/AlGaAs, AlAs/AlGaAs, and InGaP/GaAs substrates, and InAlAs/InGaAs grown on Inp substrate; to conduct theoretical and experimental studies of the planar metal grating-coupled structures for normal incident illumination on the QWIPs. Different metal grating coupling structures using 1-D (line) and 2-D (square) metal gratings for the QWIPs will be studied in order to achieve high coupling efficiency under normal front- and back illuminations; and to perform theoretical and experimental studies of dark-current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity on different types of QWIPs developed under this program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 10, 1992
- Accession Number
- ADA257799
Entities
People
- Shengsan Li
Organizations
- University of Florida