Pseudomorphic Stabilization of Diamond on Non-Diamond Substrates. Part 1. Diamond Grown on Single Crystal Beryllium Oxide. Part 2. Anomalous Band Gap Behavior and Phase Stability of c-BN/Diamond Alloys

Abstract

Diamond was grown on single crystal beryllium oxide by hot-filament chemical vapor deposition. Individual diamond crystals grew epitaxially on the basal plane of BeO with the epitaxial relationship: (111)diamond // (0001) and < 1 1 0 >diamond rotated by less than 6 deg from < 1150 > BeO. Electronic structure calculations of mixed crystals of c-BN and diamond show pronounced band gap bowing. The calculations predict only very limited mutual solubility in the solid state.

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Document Details

Document Type
Technical Report
Publication Date
Oct 12, 1992
Accession Number
ADA257845

Entities

People

  • A. Argoitia
  • J. C. Angus
  • Liqiang Wang
  • P. Pirouz
  • X. I. Ning

Organizations

  • Case Western Reserve University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Coatings
  • Critical Temperature
  • Crystal Structure
  • Crystals
  • Electron Beams
  • Elements
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Orientation (Direction)
  • Phase Diagrams
  • Silicon Carbide
  • Solid Solutions
  • Vapor Deposition

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene