HPM Damage Thresholds of GaAs FETs and HEMTs
Abstract
Measurements are presented of the damage thresholds of low-noise gallium arsenide (GaAs) field-effect transistors (FETs) and high-electron- mobility transistors (HEMTs) when these devices are exposed to high-power microwave pulses. Because the devices measured have gate lengths of one-half micron or less, they represent the state of the art and thus provide a susceptibility database for receiver- and system-design engineers. As the devices were biased for low-noise opera- tion at room temperature, most of these measurements simulated normal system operation. However, to determine the effects of temperature on the damage threshold, several measurements were made at -20 and 95 C. Also, measurements were made under different conditions of bias on the device and different frequency content of the microwave input (i.e., single and multiple tones), to determine the effect of these factors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1992
- Accession Number
- ADA257897
Entities
People
- A. A. Moulthrop
- H. J. Wintroub
- M. S. Muha
- R. B. Dybal
Organizations
- The Aerospace Corporation