Three-Terminal Superconducting Device Research

Abstract

The goal of this cost-shared contract research was to investigate potential new three-terminal cryogenic device structures in order to explore new regimes of device physics and ultimately to develop better cryogenic superconducting devices. There were three principal thrusts during the term of this contract: Submicron injection-controlled weak links; ultrashort FET's with superconducting source and drain contacts which induce superconductivity in the channel, and; electric field induced changes in the carrier densities of high-Tc materials. In each case our approach was to fabricate, study, and analyze experimental structures with the aim of understanding device potential. In addition to the above three terminal device thrusts, because of the enormous new opportunity that the discovery of high temperature superconductivity offered, a portion of the contract effort was directed at elucidating the basic properties of these materials with the aim of understanding their device potential.

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Document Details

Document Type
Technical Report
Publication Date
Sep 18, 1992
Accession Number
ADA257907

Entities

People

  • William J. Gallagher

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemistry
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Magnetic Fields
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology