Quarterly Report for ALE Project

Abstract

Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures Of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 deg C, film growth rate is roughly 2 monolayer per cycle (one cycle equals l Si2H6 and l Si2Cl6 exposure). At 475 deg C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1992
Accession Number
ADA258034

Entities

People

  • D. D. Koleskoe
  • D. Grutzmacher
  • F. J. Himpsel
  • S. M. Gates
  • Subramanian S. Iyer

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Chemical Reactions
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Chlorination
  • Desorption
  • Epitaxial Growth
  • Films
  • Geometry
  • Materials
  • Quantum Wells
  • Scattering
  • Spectra
  • Spectroscopy
  • Surface Chemistry
  • Thermodynamics

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.