Controlled Nucleation and Growth of Semiconducting Diamond
Abstract
UHV surface analysis measurements of film growth have been coupled with novel precursor chemistry to study the effect of precursor chemical structure on the efficiency of diamond film nucleation and growth. The goal is to optimize source gases and substrate surface preparation methods for both doped and undoped diamond film nucleation and growth, enabling the use of diamond in field emission, semiconductor, and optoelectronic applications. 'Surface perfection' of the diamond substrate was found to be a crucial factor in CVD of sp2-free diamond deposition. Exposure of a diamond 100 surface to CO at high temperature (900 C) resulted in propagation of the diamond surface and extreme smoothing as monitored by RHEED. Growth was apparently linked to an inadvertent impurity, iron, which may have catalyzed the decomposition of CO. Improved nucleation and growth rates from non-hydrogen-containing carbon sources may be achievable with catalysis by transition metals. We intend to use this discovery in Phase II to develop diamond emitters for flat panel displays, UHV analytical instruments, and microwave vacuum electronics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 18, 1992
- Accession Number
- ADA258541
Entities
People
- Bo-yang Lin
- C. P. Beetz