Pseudomorphic Semiconducting Heterostructures from Combinations of AIN, GaN and Selected SiC Polytypes: Theoretical Advancement and its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development.
Abstract
Pseudomorphic bilayer structures containing Beta(3C)-SiC and 2H-AlN have been grown for the first time on vicinal alpha(6H)-SiC(0001) homoepitaxial layers at 1050 deg C by plasma-assisted, gas source molecular beam epitaxy. High energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers were initiated at steps on the 6H- SiC film. Pseudomorphic layers of GaN have also been deposited on thin films of AlN grown on a(6H)-SiC(0001) and sapphire(0001). This was achieved by preventing the formation of a thin amorphous layer on both substrates via reaction with the active N species from the ECR plasma source. The p-type and n-type doping of GaN during deposition with Mg and Si, respectively, has also been achieved for the first time. The resistivity, Hall mobility and carrier concentration of the p-type material were 0.5 ohm-cm, 10 cm2/V.s and lxl0(18) cm-3, respectively. Layers of cubic-BN have been achieved on Si(100) and diamond(100); however, they were occurred as a final step in a sequence; wherein, the prior layers consisted of a-BN and h-BN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA259177
Entities
People
- Robert F Davis
Organizations
- North Carolina State University