Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization.
Abstract
An integrated growth and surface characterization system containing a hot filament reactor, sample transfer station, ESD and XPS has been established to investigate the ALE of diamond films. Complementary experiments concerned with the nucleation of diamond on molten surfaces, e. g., Al and Ge have also been conducted. Formation of GeO2 or an aluminum carbide and the degradation of the diamond by the molten material inhibited nucleation on the melted area. Monocrystalline thin films of Beta-SiC have been achieved in the temperature range of 850 deg -980 deg C by atomic layer-by-layer deposition of Si and C species via sequential exposures of Si(100) substrates to Si2H6 and C2H4. A UHV analytical system containing TPD, AES and XPS is being constructed in concert with the SiC ALE studies to determine the reaction chemistry important to this process. An eximer laser ablation system for the ALE of CeO2 has been completed and employed to successfully deposit films of this material on Si(100).
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA259244
Entities
People
- J. J. Sumakeris
- Jeffrey T Glass
- L. Tye
- M. B. Ferrara
- Nadia El-masry
- P. Goeller
- Robert F Davis
- S. King
- Salah Bedair
- Shuta Tanaka
Organizations
- North Carolina State University