Interface Properties of Wide Bandgap Semiconductor Structures
Abstract
Theoretical computations using the Car-Parrinello version of quantum molecular dynamics is being used to study the structure, bonding, and reactions of various C-, Cl-, and H-containing species on the diamond surface, particularly as they pertain to the ALE of diamond. Related studies are also focused on the potential for particular elements to be donor and acceptor species in GaN and AlN. The interfacial aspects of diamond growth and the negative electron affinity on the (111) surface have been extensively investigated. Computer-controlled synthesis of diamond has been achieved using an oxy-C2H2 torch. Two-dimensional growth was achieved. Epitaxial films of cubic Beta(3C)-SiC(111) and AlN(0001) have been deposited on alpha(6H)-SiC(0001) substrates oriented 3-4 deg towards (1120) at 1050 deg C via gas-source MBE using Si2H6, C2H4, thermal evaporation of Al and activated N species from an ECR plasma. HRTEM revealed that the nucleation and growth of the Beta(3C)-SiC regions occurred primarily on terraces between closely spaced steps. Pseudomorphic bilayer structures containing Beta(3C)-SiC and 2H-AlN have been grown under the same conditions for the first time. Epitaxial GaP and GaN films have also been achieved via GSMBE at 200 deg C and ALE at 635 deg C, respectively. Rectifying contacts of (1) SiGe alloys and (2) Ti, Pt, and Hf have been deposited and characterized on diamond (100) and alpha(6H)-SiC(0001), respectively.... Molecular dynamics, Thin films, Diamond surface, Atomic layer epitaxy, AlN, GaN, SiC, Oxy-acetylene torch, MBE, Pseudomorphic heterostructures, Schottky contacts, SiGe alloys.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA259416
Entities
People
- Jeffrey T Glass
- Jerry Bernhole
- Robert F Davis
- Salah Bedair
Organizations
- North Carolina State University