Nitride Semiconductors for Ultraviolet Detection
Abstract
Thin films of GaN and AlxGal-xN have been deposited by modified gas source MBE on alpha(6H)SiC(0001) and sapphire(0001). The values of x ranged from 0 to 1 in intervals of 0.2, as determined scanning Auger spectrometry. Simple UV photo detectors were produced and tested. The gains in the detectors was 10-20 at a bias voltage of 5 volts. The photocurrents for the solid solution detectors were much larger than for the pure GaN. Intrinsic, Mg p-type and Si n-type doped GaN films have also been achieved during growth. GaN thin films have also been achieved via atomic layer epitaxy on SiC substrates from triethy gallium and ammonia. Additional efforts have been channeled to develop luminescence facilities operative in the blue-UV wavelength range, ion implantation and contact studies and reactive ion etching facilities for GaN and AIN studies.... Thin films, GaN, AlGaN solid solutions, gas source MBE, SiC(000I), sapphire(0001), photodetectors, p-type GaN, n-type GaN, ion implantation, reactive ion etching.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA259545
Entities
People
- Bill Perry
- Cheng Wang
- Daniel Kester
- K. S. Ailey-trent
- Kimberly Webber
- Laura Smith
- Robert F Davis
- Russell Patterson
- Warren Weeks
Organizations
- North Carolina State University