Formation of Defect-Free Metal/Semiconductor Contacts
Abstract
This program focused on the growth of metallic overlayers on semiconductor surfaces. Its goal was to investigate interface chemistry for a wide variety of metal-semiconductor systems and determine the growth structures produced by varying the metal and the processes of deposition. It was hoped that defect-free interfaces could be created by controlling the chemistry or the growth process itself. Indeed, a novel process involving cluster deposition was developed and shown to give interfaces that were free of conventional semiconductor defects. Throughout this program, we sought to use modern surface science techniques to investigate the chemical and physical properties of metal- semiconductor interfaces. Over a six year period, we were able to amass a large amount of information regarding semiconductor surface disruption induced by the growing metal overlayers, interface intermixing, and overlayer structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 15, 1992
- Accession Number
- ADA259604
Entities
People
- John H. Weaver
Organizations
- University of Minnesota