The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth using Emission Electron Microscopy
Abstract
A miniature gas dosing apparatus for low pressure (10 -4) Torr diamond growth has been tested: photoelectron microscope images have been acquired under deposition conditions, and alteration in the image due to atomic hydrogen impact/reaction have been observed. Diamond growth on polycrystalline films has not been verified since incremental growth at the low rate expected will be difficult to detect on a rough substrate. Growth test on Mo(100) and (310) are underway. In situ etching of diamond in oxygen has shown that diamonds are embedded in a Mo-carbide layer which remains after etching. The pits left after etching indicate nucleation on Mo, not Mo-carbide. The observation of ordered carbon films deposition from a methane/atomic hydrogen gas stream directed at a Mo(100) single crystal surface in situ at 1000 K continues. Attempts at creating nucleation sites to specifically enhance two dimensional growth have been partially successful. For epitaxial systems, the LEED microscope, which uses diffraction contrast to form an image, will be used to study in situ steps and ledges engineered to match the diamond lattice. Diamond (100) LEED patterns and H, desorption have been observed. Si(310) wafers, Mo(310) and C(310) are currently being characterized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA259616
Entities
People
- Martin E Kordesch
Organizations
- Ohio University