Radiation Effects in HEMTs
Abstract
Various structure HEMTs have been irradiated with He ions (MeV alpha particle), fast neutrons and Co6O gamma rays. The radiation doze was varied up to 10(exp 13)a/sq cm, 10(exp 16)n/sq cm and 10(exp 7) rads Si. The investigation has been extended on GaAs Layers and AlGaAs/GaAs heterojunctions in order to determine the defects that are induced by radiation in GaAs and AlGaAs. The degradation sources of HEMTs and their dependence on the device layer structure have been determined. A charge control model was, also, employed in order to separate the contribution of donor and buffer layers on the 2DEG degradation. Finally the investigation included a comparative study of MESFET radiation degradation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1991
- Accession Number
- ADA259642
Entities
People
- G. J. Papaioannou
Organizations
- National and Kapodistrian University of Athens