Ion Beam Mixing in Multi-Quantum Well Structures
Abstract
The aims of the project were to investigate impurity induced disordering, using ion implantation, for the fabrication of optical waveguides in Aluminum Gallium Arsenide/Gallium Arsenide quantum well structures. Research prior to the initiation of the contract had indicated that the extent of the disordering, as measured by photoluminescence, was determined by both the nature, energy and dose of the implanted ion, and the temperature and time of the annealing process. While encouraging results were obtained for the loss characteristics of disorder delineated stripe optical waveguides, it was clear that not enough was known about the properties of the disordered QW structures to enable low loss disorder delineated strip optical waveguides to be designed and fabricated in AlGaAs/GaAs MQW structures. In addition the impurity chosen to disorder the QW was also of importance and a detailed evaluation of the appropriate ion suggested that some of the less common impurities would probably be more suitable for photonic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 20, 1992
- Accession Number
- ADA259772
Entities
People
- Bernard L. Weiss
Organizations
- University of Surrey