Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

Abstract

Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1992
Accession Number
ADA259773

Entities

People

  • Theodore D. Moustakas

Organizations

  • Boston University

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electron Mobility
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Measurement
  • Molecular Beam Epitaxy
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Solid State Physics
  • Wide Bandgap Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene