Processing of Patterned Ferroelectric Capacitors

Abstract

Processing steps are described in detail for a procedure to fabricate sol-gel-derived lead-zirconate-titanate (PZT) ferroelectric thin-film capacitors in a manner compatible with processed complementary metal-oxide-semiconductor (CMOS) integrated-circuit wafers. The intended purpose of this work is to fabricate nonvolatile-element memory test structures for electrical and radiation characterization studies. A number of critical processing issues dealing with the etching of the PZT films and the deposition and definition of the top and bottom platinum electrodes were addressed and suitable solutions found during the course of this work. Using the procedures described herein, we fabricated working PZT capacitors and evaluated them electrically.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1992
Accession Number
ADA259936

Entities

People

  • Bernard J. Rod

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Complementary Metal-Oxide Semiconductors
  • Electronics
  • Elements
  • Films
  • Integrated Circuits
  • Jet Propulsion
  • Lead Zirconate Titanates
  • Materials
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Metals
  • Military Research
  • Nuclear Energy
  • Oxides
  • Radiation
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems