Advances in Multiple Quantum Well IR Detectors
Abstract
The performance of GaAs/AlGaAs multiple quantum well long-wavelength infrared detectors is evaluated for potential applications in focal plane arrays. A number of GaAs/AlGaAs quantum well infrared detectors with absorption between 7 to 12 um have been fabricated and characterized. In these samples, the quantum well width and barrier height were held approximately constant, while the AlGaAs barrier thickness was varied from 300 to 500 A. these detectors were characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements at temperatures ranging from 6 to 80 K. A maximum detectivity of 4 x 1013 cm/Hz/W at 6 K is obtained at A-8.4 um for the 500 A barrier sample.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1992
- Accession Number
- ADA260136
Entities
People
- M. O'loughlin
- M. Rosenbluth
- W. Bloss
Organizations
- The Aerospace Corporation