RF Vacuum Microelectronics
Abstract
We summarize our fifth quarter progress towards developing a thin film edge emitter vacuum triode capable of 1 GHz modulation for sustained (>1 hour) periods of time. We completed fabrication of the first thin film edge emitter vacuum transistors this quarter. Significant DC characterization of these devices was carried out. Triode characteristics have been observed on many devices. Low frequency (1 KHz) modulation of the devices has been shown. These vacuum transistors have high currents (50 microamps), high current densities (10 microamps/microns) and estimated transconductances of >1.5 microns. Such device parameters are above those required to achieve 1 GHz operation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 04, 1993
- Accession Number
- ADA260192
Entities
People
- David K. Arch
Organizations
- Honeywell International, Inc.