P+ Contacts on GaAs for Semiconductor Lasers
Abstract
Discusses the physics and engineering of semiconductor electrical contacts and the importance of low resistance Ohmic contacts for the best performance from electronic devices. A simple method is used to deduce the resistance of the electrical contacts and the bulk semiconductor. The fabrication process for P+ GaAs contacts is discussed. Test results are presented for the resistance of the metal electrodes, P+ GaAs bulk, the intrinsic contact resistance and the temperature dependence of the metal and P+ GaAs. The distributed impedance of the contact structure for semiconductor lasers is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1992
- Accession Number
- ADA260207
Entities
People
- Alexander Olewicz
- David A. Honey
- Michael A. Parker
- Paul D. Swanson
- Stuart I. Libby
Organizations
- Rome Laboratory