Distribution of Trapped Electrons at Interface States in ACTFEL Devices

Abstract

The distribution of trapped electrons at interface states in alternating-current thin-film electroluminescent (ACTFEL) devices is assessed using a new field-stimulated charge measurement technique in which the polarization charge transient is measured experimentally and curve fit using a model for the dynamic emission of electrons from interface states. The trapped electron distribution is relatively small at low energy but rises abruptly at approximately 0.6-0.8 eV below the conduction band minimum for an ACTFEL device with SiON insulators.... ACTFEL, Electroluminescence, Interface states, Electrical characterization, ZnS:Mn.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA260396

Entities

People

  • A. Abu-dayah
  • J. F. Wager
  • S. Kobayashi

Organizations

  • Oregon State University

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Amplitude
  • Band Structures
  • Computers
  • Conduction Bands
  • Curve Fitting
  • Electricity
  • Electron Density
  • Electron Emission
  • Electrons
  • Emission
  • Energy Bands
  • Engineering
  • Equations
  • Measurement
  • Photoexcitation
  • Pulse Amplitude

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics