The 308-nm Laser Photodissociation of HN3 Adsorbed on Si(111)-7X7
Abstract
The photodissociation of HN3 adsorbed on Si(111)-7x7 was investigated at 308 nm using HREELS and XPS. Species such as NHx, N2, and N3, were identified on the surface with comparable concentrations after the irradiation of a 10 L HN3 dosed Si(111) surface with 1 x 10(exp 20) photons. The N3 species showed two stretching modes at 178 and 255 meV, while that of the N2 appeared at 206 meV in HREELS. The formation of these products was also corroborated by the corresponding XPS results. Further laser irradiation caused the dissociation and partial desorption of the adsorbates with NH(x) left on the surface. Annealing the post-irradiated sample to 500 and 800 K resulted in the breaking of the NH bond and the desorption of the H-species, while the atomic N remained on the surface forming silicon nitride. The possibility of using HN3 for laser-induced chemical vapor deposition Of Si3N4 and group-III nitrides at low temperatures is suggested.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1993
- Accession Number
- ADA260406
Entities
People
- Lin Ming-chang
- Yuheng Bu
Organizations
- Emory University