Influence of Defects in HgCdTe Grown by Molecular Beam Epitaxy (MBE) on Electrical Devices

Abstract

In this program the Microphysics Laboratory has been successful in: (1) identifying the presence of microtwins in HgCdTe(111)B grown by MBE which are limiting device performance and yield, (2) determining their relation with the structural and electrical properties of the epilayer (3) understanding their formation mechanism (4) controlling and eliminating their formation through stringent control of the growth parameters, and (5) in formulating the hypothesis that impurities, very likely diffusing from the substrate, are present in the epilayer.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1992
Accession Number
ADA260457

Entities

People

  • Jean-pierre Faurie

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Air Platforms
  • Human Systems

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystal Lattices
  • Crystal Twinning
  • Crystals
  • Diffraction
  • Electrical Properties
  • Electron Microscopy
  • Epitaxial Growth
  • Fabrication
  • Impurities
  • Materials
  • Molecular Beam Epitaxy
  • Physical Properties
  • Substrates
  • Surface Temperature
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design