Gas Source Molecular Beam Epitaxial Growth of GaN
Abstract
Aluminum gallium nitride (AlGaN) has long been recognized as a promising radiation hard optoelectronic material. AlGaN has a wide direct band gap and therefore has potential applications in the fabrication of short wave- length devices, e.g., detectors and light emitting diodes in the visible to ultraviolet region and its piezoelectric properties and high acoustic velocities make it attractive for acoustic devices. The technical objective in Phase I was to determine if low temperature sources based on covalently bonded Group III- nitrogen compounds could be used to prepare AlGaN films by gas source molecular beam epitaxy. The program required to investigate low temperature AlGaN source materials was separated into two parts, (1) the synthesis, purification, and pyrolysis of gallium-nitrogen adducts and aluminum-nitrogen adducts and (2) the growth of GaN by chemical beam epitaxy. We clearly demonstrated under CBE conditions GaNxCy films could be grown using compounds with preexisting Ga-N bonds whereas no films were formed using trimethylgallium. Dimethylgallium amide was shown to produce dramatically lower carbon content films in the presence ammonia than did trimethylgallium in the presence of ammonia.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 25, 1992
- Accession Number
- ADA260524
Entities
People
- Duncan W. Brown