Research on Radiation Effects in Support of the Defense Nuclear Agency
Abstract
Because of their higher switching speeds, power MOSFETs are favored over power BJTs in spaceborne and military applications where size and weight are important. However, power MOSFETs are subject to degradation and failure mechanisms in radiation environments, including single event burnout, reduction of breakdown voltage, threshold shifts, and loss of current drive. This report discusses radiation-effects research in the areas of single event burnout of power MOSFETs and power BJTS, simulation of the effect of ionizing radiation on power-MOSFET breakdown voltage, charge buildup in field oxides, and 1/f noise in power MOSFETS. A model for single event burnout is presented and structural changes to reduce susceptibility are provided. A simulation tool for designing high-voltage termination structures is presented and applied to field-ring and field-plate terminations. Guidelines to minimize breakdown-voltage degradation are given. A method of correlating charge buildup in field oxides to that in test devices is discussed. The use of 1/f noise as a radiation-effects characterization tool in power MOSFETs is examined. This work is intended to: (1) facilitate selection of appropriate power MOSFETs for radiation environments and (2) provide design techniques to improve the radiation hardness of power MOS FETs.... Power MOSFETs, Radiation Effects, 1/f Noise in MOSFETs, Single Event Burnout, Simulation of Power MOSFETs, Breakdown Voltage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1993
- Accession Number
- ADA260668
Entities
People
- Kenneth F. Galloway
- Ronald D. Schrimpf
Organizations
- University of Arizona