Smart Microsensors for High Temperature Applications
Abstract
The following document details the results of efforts to develop a high temperature sensor technology based in Kopin's proprietary ISEtm SOI material. Results are presented from a detailed analysis of the piezoresistive properties, and of the internal stress in the layer. These results show the material to be electrically similar to bulk, with very low internal stress. This makes ISEtm an ideal material choice for this application. A full sensor process sequence, with mask set, and enabling process equipment and techniques, was developed for this program. In parallel with the process development, extensive circuit analysis and modeling was performed to identify the best high temperature sensing circuit for this task. After modeling, test circuits were fabricated in bulk wafers to evaluate the design. The final design, a switching capacitive MOS circuit with proportional output, is expected to produce a sensor with 0.1% accuracy over the temperature range of -60 deg C to 300 deg C. Kopin is currently pursuing industrial financing for Phase III of this work to complete the integration of this work for commercial application. Microsensors, High Temperature, Smart, SOI, Sensors, Capacitive, Pressure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 04, 1993
- Accession Number
- ADA260747
Entities
People
- D. P. Vu
- J. C. Fan
- M. W. Batty
Organizations
- Kopin Corporation