Scanning Tunneling Microscopy of 3-5 Semiconductors

Abstract

We report the first scanning tunneling microscopy images with atomic resolution of steps on the (110) surfaces of InAs, InP, and InSb, and we propose models of the surface geometries which lead to those steps. Relaxation of the step edges is interpreted in terms of dimerization of neighboring atoms. These studies of steps provide the basic foundation for future work oriented toward understanding the roles of steps as nucleation centers during growth of nanostructures and the importance of step defects in ultra-small devices, InAs, InP, InSb, Scanning tunneling microscopy.

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Document Details

Document Type
Technical Report
Publication Date
Jan 29, 1993
Accession Number
ADA260965

Entities

People

  • John D. Dow

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Cyber
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Crystal Structure
  • Crystallography
  • Crystals
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Geometry
  • Materials
  • Microscopy
  • Military Research
  • Molecular Dynamics
  • Periodic Variations
  • Quantum Dots
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene