Analysis of Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures
Abstract
We discuss the analysis of transient photoluminescence measurements and the extraction of carrier recombination lifetimes in GaAs and AlGaAs double heterostructures. In contrast to recently reported claims, we demonstrate that even in regions where the measured decay curves show single exponential behavior, the slopes do not, in general, correspond to any single physical carrier lifetime, such as the minority carrier lifetime. A series of measurements over a range of incident optical intensities is required to extract such lifetimes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 13, 1993
- Accession Number
- ADA261154
Entities
People
- Dean C. Marvin
- Linda F. Halle
- Steven C. Moss
Organizations
- The Aerospace Corporation