SiC Microsensor with Piezoresistive Diamond Sensing Elements

Abstract

Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following: (a) Growth of polycrystalline diamond on Beta-SiC substrates. (b) The first isolated p-type diamond resistive elements grown on intrinsic diamond. (c) Establishment of microfabrication processes for sensor manufacture. (d) Demonstration of a large piezoresistive effect in poly-diamond. (e) Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1992
Accession Number
ADA261346

Entities

People

  • A. D. Kurtz
  • J. L. Davidson
  • J. S> Shor

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Structure
  • Demonstrations
  • Diamond Films
  • Elements
  • Fabrication
  • High Temperature
  • Materials
  • Materials Processing
  • Measurement
  • Mechanical Properties
  • Propulsion Systems
  • Resistance
  • Semiconductors
  • Silicon Carbide
  • Single Crystals
  • Substrates

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Semiconductor Device Technology