RF Vacuum Microelectrics
Abstract
We summarize our fifth quarter results and discuss plans for the remainder of the baseline program which is to demonstrate a thin film edge emitter triode with 10 micro-A/micrometer emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. We completed fabrication of the first thin film edge emitter vacuum transistors this quarter. Extensive DC characterization has been carried out. Triode characteristics have been observed on many devices. Low frequency (1 KHz) modulation of the devices has been shown. Parametric testing shows these devices to have the high currents (50 micro-A), high current densities (10 micro-A/mM) and transconductances (1.5 micro-S necessary to achieve 1 GHz operation. High frequency testing is currently underway.... Vacuum microelectronics, Edge emitter, Triode high frequency devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1993
- Accession Number
- ADA261784
Entities
People
- Akintunde I. Akinwande
- D. Arch
- P. Bauhahn
Organizations
- Honeywell International, Inc.