Improved Field Emitter Current Densities and Stability Through the Application of a Proprietary Process
Abstract
As detailed in the previous reports, the necessary current density (60 A/sq cm), linear current density (3 mA/mm) and stability (> 2 days) to meet the contract goals (at least theoretically) have been achieved. The next step is to fabricate three terminal devices to demonstrate the remaining contract goal - a one GHz current gain cutoff frequency (f sub t). Unlike the traditional Spindt-type of emitter where, because of the circularly symmetric nature of the gate, the electrons can be emitted to an anode spaced at quite large distances away, the planar emitter-gate structure used for the single-crystal approach necessitates an anode spacing on the order of several microns to prevent a significant fraction of the emitted electrons from being collected by the gate. Hence the need to fabricate the 3-terminal devices monolithically. This report details the electron trajectory simulations needed for proper design of the three-terminal devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1992
- Accession Number
- ADA261954