Pseudomorphic Stabilization of Diamond on Non-Diamond Substrates: Heteroepitaxially Grown Diamond on a c-BN(111) Surface.

Abstract

A continuous diamond film with a thickness of about 10 microns was grown on (111) faces of single crystal cubic boron nitride (c-BN) by hot- Filament chemical vapor deposition (CVD). The morphology and microstructure of the diamond film were investigated by scanning and transmission electron microscopy. Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate. Indirect evidence from scanning electron microscopy indicates that parallel epitaxy was achieved over the entire boron terminated face of the c-BN crystal, which had linear dimensions of approximately 400 microns....Diamond, Cubic Boron Nitride, Heteroepitaxy Chemical Vapor Deposition.

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Document Details

Document Type
Technical Report
Publication Date
Feb 08, 1993
Accession Number
ADA262106

Entities

People

  • A. Argoitia
  • J. C. Angus
  • J. S. Ma
  • Liqiang Wang
  • P. Pirouz

Organizations

  • Case Western Reserve University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Crystals
  • Diamond Films
  • Electron Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • High Resolution
  • Materials
  • Materials Science
  • Microscopy
  • Parallel Orientation
  • Scanning Electron Microscopy
  • Transmission Electron Microscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene