Kinetics and Thermochemistry of Tetramethyl and Tetraethyl Orthosilicates in the Gas Phase

Abstract

Recently there has been considerable interest in the chemistry of tetraalkyl orthosilicates, particularly with respect to the deposition of SiO2 insulating films using tetraethyl orthosilicate and other larger members of the homolog. Most of these studies were carried out on solid surfaces and often involved the interaction of various silicate molecules with hydroxyl groups on the surface. To date, very little information is available on the thermochemistry and the stabilities of the whole class of Si(OR)4 molecules, where R equals alkyl. For example, what is the strength of the RO-Si(OR)3 or the R-OSi(OR)3 bond? To our knowledge, no such information is available in the literature today. In order to understand the basic thermochemistry of the Si(OR) 4 molecules, we have recently investigated the kinetics of thermal decomposition of tetramethyl orthosilicate (TMOS) and tetraethyl orthosilicate (TEOS) in the gas phase by Fourier transform infrared spectrometry.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA262115

Entities

People

  • C. F. Melius
  • Jason C. Chu
  • Lin Ming-chang
  • R. Soller

Organizations

  • Emory University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reaction Properties
  • Chemical Vapor Deposition
  • Chemistry
  • Decomposition
  • Elimination
  • Elimination Reactions
  • Materials
  • Measurement
  • Military Research
  • Molecules
  • Nesosilicates
  • New Jersey
  • New York
  • Partial Pressure
  • Thermochemistry
  • United States
  • United States Government

Fields of Study

  • Chemistry

Readers

  • Materials Science and Engineering.
  • Organic Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene