Innovative Optoelectronic Materials and Structures Using OMVPE

Abstract

An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized by conventional means. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. The materials and techniques developed in this research program will result in significant simplifications to the fabrication sequence required to realize complex integrated optoelectronic circuits.

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Document Details

Document Type
Technical Report
Publication Date
Mar 22, 1993
Accession Number
ADA262202

Entities

People

  • James R. Shealy

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Classification
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Dye Lasers
  • Epitaxial Growth
  • Fabrication
  • Low Temperature
  • Materials
  • Optics
  • Optoelectronic Devices
  • Quantum Wells
  • Security
  • Semiconductors
  • Transition Temperature
  • Transitions
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics