Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and A1(x)Ga(1-x)As
Abstract
The excitation and de-excitation mechanisms of the 1.54 microns emissions, from ion implanted and MBE grown GaAs:Er and A1xGa1-xAs:Er, were studied through luminescence experiments. Experimental techniques included photoluminescence, time resolved photoluminescence, and selective excitation photoluminescence. The Er(3+) emissions were studied as a function of Er concentration, aluminum mole friction, n- and p-type doping level, and annealing temperature. In addition oxygen co-doping studies were done in order to determine the role played by oxygen in the Er(3+) luminescence.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1993
- Accession Number
- ADA262602
Entities
People
- Jose E. Colon
Organizations
- Air Force Institute of Technology