A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond

Abstract

Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/ Au deposited on diamond produced adherent ohmic contacts after annealing at 950 degrees LC. A thermally activated solid state reaction which produces a refractory carbide precipitate at the diamond/ metal interface is the principal factor in affecting the properties of the contacts. the interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x-ray diffraction, metallography, and I-V measurements.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1990
Accession Number
ADA262850

Entities

People

  • J. R. Zeidler
  • K. L. Moazed
  • M. J. Taylor

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Band Gaps
  • Ceramic Materials
  • Chemistry
  • Diffraction
  • Electron Microscopy
  • Electron Spectroscopy
  • Films
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Scanning Electron Microscopy
  • Semiconductors
  • Silicon Carbide
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics