Development of Germanium-Silicon Growth Technology
Abstract
The growth of heterojunction internal photoemission detectors and multiple quantum well detectors for the far-infrared has been explored. Structures have been grown using ultrahigh vacuum chemical vapor deposition and have been characterized with X-ray diffraction, SIMS, RBS, and photoluminescence. Infrared response has been observed in some structures. Characterization performed to date has permitted the identification of growth parameters for experiments which will be performed in the next year.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 1993
- Accession Number
- ADA262891
Entities
People
- D. W. Greve
Organizations
- Carnegie Mellon University