Pseudomorphic Narrow Gap Materials for High Performance Devices

Abstract

InAs field effect transistors (1 micrometer gate length) have been fabricated and showed extrinsic (intrinsic) transconductance as high as 414 mS/ mm (670mS/mm). The cut-off frequency is shown to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate. length. Kink- free AlInAs/GaInAs/InP HEMTs have been fabricated. Heterojunction transistors with impact ionization at the emitter-base junction (i.e, when conduction band offset is larger than the band gap of the base) have been analyzed theoretically, and are shown to yield improved performance. Non-radiative Auger recombination in quantum wells has been analyzed in the context of strained lasers. We have also shown theoretically that infrared absorption at normal incidence due to intervalence subband transition can be greatly enhanced in light-hole and heavy-hole inverted strained GaInAs/AlInAs quantum wells.

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Document Details

Document Type
Technical Report
Publication Date
Apr 14, 1993
Accession Number
ADA263072

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Bipolar Junction Transistors
  • Detection
  • Detectors
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Excitons
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Military Research
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing