Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
Silicon-germanium films have been grown by electron-beam deposition on naturally occurring p-type semiconducting diamond(OO1) substrates. As evidenced by low-energy electron diffraction and scanning tunneling microscopy, the SiGe layers were polycrystalline. Corresponding current-voltage (I-V) measurements conducted at room temperature demonstrated the formation of a low- barrier rectifying contact. Consistent with the observed low-barrier height, the I-V measurements recorded at 300 deg C exhibited ohmic-behavior. In addition, subsequent post-growth annealing of the SiGe contacts at 850 deg C in ul tra- high vacuum showed an apparent degradation in the I-V characteristics. Microwave performance of p-type diamond MESFET's is under investigation. A simulation program is being developed to enable a realistic evaluation of diamond MESFETs for high temperature and RF power applications. The program currently accounts for incomplete activation and will eventually account for all physical phenomena believed to be significant, including thermal and breakdown effects.... Diamond thin films, Device modeling, MESFET, MOSFET, JFET, FET, Bias, Acceptor impurity, Microwave performance, Pisces-IEB, Teflon, SiGe, P-Type diamond, I-V measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1993
- Accession Number
- ADA263204
Entities
People
- J. T. Glass
- R. J. Trew
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University