Low Voltage Electron Beam Lithography.

Abstract

The contract has three parts covering aspects of high precision electron beam lithography: (1) Comprehensive computer modelling of the electron beam tool; (2) Experimental determination of the properties of sources, columns, and targets; and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1992
Accession Number
ADA263360

Entities

People

  • R. Browning
  • Roger Fabian W. Pease

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Contracts
  • Crystals
  • Data Sets
  • Differential Cross Sections
  • Electron Beam Lithography
  • Electron Beams
  • Electron Emission
  • Electron Energy
  • Electron Scattering
  • Electrons
  • Energy
  • Lithography
  • Low Voltage
  • Orientation (Direction)
  • Single Crystals
  • Standards

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics / Magnetohydrodynamics
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene