Quantum Devices Using Si-Based Superlattices and Structures
Abstract
The purpose of the research was to perform scientific study and experimentation on potential new Si-based devices for future optical and electronic applications. The research areas included novel detectors, sources, new properties, and other quantum devices using Si molecular beam epitaxy (Si- MBE) based superlattices and superstructures. With the current ARO support, we have made significant advances in the understanding of optical properties of intersubband transition of SiGe/Si multiple quantum wells, and the fabrication of multiple quantum well infrared detectors operating in the mid infrared range. Large many-body effects have been observed in heavily doped Si and SiGe/Si quantum well structures. Normal incidence intersubband transitions have been demonstrated for both n and p type SiGe/Si quantum well structures. For potential realization of Si-based light sources we have studied the luminescence from monolayer superlattices and strained alloy layers. In the area of quantum transport, a resonant tunneling transistor has been demonstrated.... Intersubband, Quantum Transport, Many-body Effects, Superlattices, Infrared Detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 04, 1993
- Accession Number
- ADA263700
Entities
People
- Gamani Karunasiri
- Kang L. Wang
Organizations
- University of California, Los Angeles