In-Situ Pre-Oxidation Thermal Cleaning of Silicon in Nitric-Oxide/Hydrochloric Acid Gas Mixture.
Abstract
The purpose of this investigation was to study thermal cleaning of silicon surfaces in Nitric-Oxide/Hydrochloric acid (NO/HCI) gas mixture, and to integrate this cleaning mode as an in situ cleanup applied prior to conventional thermal growth of gate oxide. Results obtained indicate feasibility of this approach. The electrical characteristics of MOS capacitors formed on NO/HCI cleaned surfaces did not display significant differences from devices processed in the traditional manner. The results obtained from Bias Temperature Stress test and TXRF surface analysis confirm the NO/HCI cleaning method's ability to remove metallic impurities from the water surface. They also show its effectiveness at neutralizing mobile ions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1993
- Accession Number
- ADA263907
Entities
People
- R. S. Ridley
Organizations
- Pennsylvania State University