Raman and X-Ray Scattering from Defense Semiconductor-Dielectric Nanocomposites
Abstract
Raman scattering measurements have been performed on semiconductor- insulator nanocomposites in which the semiconducting phase occupies a significant (30%) volume fraction. The composites have been synthesized by high pressure injection of the conducting melt into the nanochannels of commercially available insulating matrices. The optical phonon spectra of GaSb- and Te-SiO, composites exhibit shifts, broadenings, and asymmetries when compared to those of the semiconducting bulk. These are interpreted in terms of strains and phonon confinement in the microcrystalline semiconducting phase. X-ray diffraction measurements allow us to correlate the effects of crystallite size and strains on the optical modes of the composites.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1993
- Accession Number
- ADA264264
Entities
People
- C. A. Huber
- G. E. Walrafen
- J. A. Lubin
- T. E. Huber
- W. H. Yang
Organizations
- Howard University