Fundamental Studies of the Mechanical Behavior of Microelectronics Thin Film Materials
Abstract
This document represents a final technical report for AFOSR Grant No. 89-0185. The research program supported under this grant involved a fundamental study of the mechanical properties of microelectronic thin film materials. The focus of the work was on the microscopic processes that lead to stresses in microelectronic thin films and control the mechanical properties of these materials. Our work ranged form studies of interconnect metals, passivation glasses and heteroepitaxial thin film semiconductors. In previous reports we highlighted work done of the mechanical properties of passivation glasses and interconnect metals and the processes of failure of interconnect metals. In this final report we highlighted our work on misfit dislocation formation in heteropitaxial thin films. The body of the report contains two reports of our work on misfit dislocations. Our overall understanding of misfit dislocations in Si-Ge layers is described in the first report. That report also describes our work on the effect of capping layers on the formation of misfit dislocations. The second report describes our in situ studies of the kinetics of formation of misfit dislocations in Si-Ge films. By measuring the change of substrates curvature as a function of time during annealing we were able to determine the way in which mobile threading dislocation density changes during the course of annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1993
- Accession Number
- ADA264334
Entities
People
- William D. Nix
Organizations
- Stanford University