II-VI Semiconductor Superlattices
Abstract
The first operational semiconductor diode lasers were demonstrated in the summer of 1991 independently by two US groups, one at 3M and the other a team effort shared by Purdue and Brown Universities. As a result of the close collaboration between MBE and TEM groups within the grant, the structures for lasing and LED (as well as display device) operation were realized with the lowest defect concentrations ever reported for II-VI structures grown on GaAs by MBE. The reduction of the dislocation levels resulted from an iterative process where the growth could be modified in response to the TEM analysis. The AFOSR funded interface studies have led to our appreciation of the electrical and microstructural considerations obtaining at II-VI/III-V heterovalent interfaces. As a result the Purdue/Brown group has had equal success in making laser diodes with substrates of both doping types. The Purdue/Brown collaboration has obtained CW operations at 77K as well as pulsed operation at room temperature using a Zn(S,Se)-based device configuration emitting in the blue (490nm at room temperature)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1992
- Accession Number
- ADA264343
Entities
People
- N. Otsuka
- R.l. Gunshor
Organizations
- Purdue University