R and D Status Report: RF Vacuum Microelectronics Quarterly Progress Report. No. 5
Abstract
We summarize our sixth quarter progress towards developing a thin- film-edge, emitter vacuum transistor capable of 1 GHz modulation for sustained (>l hour) periods of time. We completed extensive DC characterization of completed devices. We also performed low frequency modulation tests of the vacuum transistors at 10-100 KHz. We designed a vacuum feedthrough with high frequency probes for testing vacuum transistors at 2-4 GHz (BNC connectors) and 10- 12 GHz (SMA connectors). A program review was held at the conclusion of the baseline phase. We also replanned the option phase of the program with a goal of obtaining vacuum transistors that have 1 GHz modulation with gain.... Vacuum microelectronics, Edge emitter, Triode, High frequency devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 06, 1993
- Accession Number
- ADA264381
Entities
People
- David K. Arch
Organizations
- Honeywell International, Inc.